鈥?/div>
Adoption of MBIT process.
Low saturation voltage.
High current capacity and wide ASO.
Specifications
Absolute Maximum Ratings
at Ta=25擄C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
Ratings
--50
--50
--6
--2
--4
--400
1
150
--55 to +150
Unit
V
V
V
A
A
mA
W
擄C
擄C
Electrical Characteristics
at Ta=25擄C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCB=-
-40V, IE=0
VEB=--4V, IC=0
VCE=-
-2V, IC=-
-100mA
VCE=-
-2V, IC=-
-1.5A
VCE=-
-10V, IC=-
-300mA
VCB=-
-10V, f=1MHz
200
40
420
16
MHz
pF
Conditions
Ratings
min
typ
max
--1
--1
560
Unit
碌A
碌A
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21805EA TS IM TB-00000380 No.8022-1/4
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