2SA2097
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2097
High-Speed Swtching Applications
DC-DC Converter Applications
路
路
路
High DC current gain: h
FE
= 200 to 500 (I
C
=
鈭?.5
A)
Low collector-emitter saturation: V
CE (sat)
=
鈭?.27
V (max)
High-speed switching: t
f
= 55 ns (typ.)
Unit: mm
Maximum Ratings
(Ta = 25擄C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Ta
=
25擄C
Tc
=
25擄C
DC
Pulse
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
Pc
T
j
T
stg
Rating
-50
-50
-7
-5
-10
-0.5
1
20
150
-55
to 150
Unit
V
V
V
A
A
JEDEC
W
擄C
擄C
鈥?/div>
SC-64
2-7J1A
JEITA
TOSHIBA
Weight: 0.36 g (typ.)
Electrical Characteristics
(Ta = 25擄C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter brakedown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Rise time
Switching time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
(BR) CEO
h
FE
(1)
h
FE
(2)
V
CE (sat)
V
BE (sat)
t
r
t
stg
t
f
Test Condition
V
CB
= -50
V, I
E
=
0
V
EB
= -7
V, I
C
=
0
I
C
= -10
mA, I
B
=
0
V
CE
= -2
V, I
C
= -0.5
A
V
CE
= -2
V, I
C
= -1.6
A
I
C
= -1.6
A, I
B
= -53
mA
I
C
= -1.6
A, I
B
= -53
mA
See Figure 1 circuit diagram
V
CC
~ -24
V, R
L
=
15
W
-
I
B1
= -I
B2
= -53
mA
Min
戮
戮
-50
200
100
戮
戮
戮
戮
戮
Typ.
戮
戮
戮
戮
戮
戮
戮
63
280
55
Max
-100
-100
戮
500
戮
-0.27
-1.10
戮
戮
戮
ns
V
V
Unit
nA
nA
V
1
2002-08-21
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