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2SA2092 Datasheet

  • 2SA2092

  • -1A / -60V Bipolar transistor

  • 87.10KB

  • 4頁

  • ROHM

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2SA2092
Transistors
-1A / -60V Bipolar transistor
2SA2092
Applications
High-speed switching, low frequency amplification
Feature
1) High speed switching. (tf : Typ. : 30ns at I
C
= -1A)
2) Low saturation voltage.
(Typ. :
鈭?/div>
200mV at I
C
=
鈭?/div>
500mA, I
B
=
鈭?/div>
50mA)
3) Strong discharge resistance for inductive load and
capacitance load.
4) Low switching noise.
Structure
PNP epitaxial planar silicon transistor
Absolute maximum ratings
(Ta=25擄C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
DC
PULSE
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
鈭?/div>
1
鈭?/div>
2
External dimensions
(Unit : mm)
TSMT3
1.0MAX
2.9
0.4
(3)
0.85
0.7
1.6
2.8
0~0.1
(1)
(2)
(1) Base
(2) Emitter
(3) Collector
0.95 0.95
1.9
0.16
Each lead has same dimensions
Abbreviated symbol : VN
Packaging specifications
Limits
鈭?0
鈭?0
鈭?
鈭?
鈭?
500
150
鈭?5
to
+150
Unit
V
V
V
A
A
mW
擄C
擄C
Part No.
2SA2092
Package
Packaging type
Code
Basic ordering unit (pieces)
TSMT3
Taping
TL
3000
h
FE
rank
Q
120-270
鈭?/div>
1 Pw=10ms
鈭?/div>
2 Each terminal mounted on a recommended land
Electrical characteristics
(Ta=25擄C)
Parameter
Collector-emitter breakdown voltage
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
鈭?
鈭?
Min.
鈭?0
鈭?0
鈭?
鈭?/div>
鈭?/div>
鈭?/div>
120
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
Typ.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?00
鈭?/div>
300
15
30
100
30
Max.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?.0
鈭?.0
鈭?00
270
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
Unit
V
V
V
碌A
碌A
mV
鈭?/div>
MHz
pF
ns
ns
ns
I
C
=
鈭?mA
I
C
=
鈭?00碌A
I
E
=
鈭?00碌A
V
CB
=
鈭?0V
V
EB
=
鈭?V
Conditions
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
鈭?
Pulse measurement
鈭?
See switching test circuit
鈭?
h
FE
rank
I
C
=
鈭?00mA,
I
B
=
鈭?0mA
V
CE
=
鈭?V,
I
C
=
鈭?00mA
V
CE
=
鈭?0V,
I
E
=100mA,
f=10MHz
V
CB
=
鈭?0V,
I
E
=0,
f=1MHz
I
C
=
鈭?A,
I
B1
=
鈭?00mA
I
B2
=100mA
V
CC
鈭?/div>
鈭?5V
鈭?/div>
Cob
ton
tstg
tf
鈭?
鈭?/div>
0.3~0.6
1/3

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