鈭?/div>
10mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SC5876
External dimensions
(Unit : mm)
UMT3
2.0
0.3
(3)
0.9
0.2
0.7
1.25
(2)
(1)
2.1
0.65 0.65
1.3
0.15
(1) Emitter
Applications
Small signal low frequency amplifier
High speed switching
(2) Base
(3) Collector
Each lead has same dimensions
Abbreviated symbol :
VM
Structure
PNP Silicon epitaxial planar transistor
Packaging specifications
Package
Type
Taping
T106
3000
Code
Basic ordering unit (pieces)
2SA2088
Absolute maximum ratings
(Ta=25擄C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
DC
I
C
I
CP
P
C
Limits
鈭?0
鈭?0
鈭?
鈭?.5
鈭?.0
200
150
鈭?5
to 150
Unit
V
V
V
A
A
mW
擄C
擄C
鈭?
鈭?
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
鈭?
Pw=10ms
鈭?
Each terminal mounted on a recommended land
Pulsed
Tj
Tstg
Rev.A
0.1Min.
1/3