飩?/div>
Electrical Characteristics
T
a
=
25擄C鹵3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cut-off current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
I
C
= 鈥?0
碌A(chǔ),
I
E
=
0
I
C
= 鈥? mA, I
B
=
0
I
E
= 鈥?0
碌A(chǔ),
I
C
=
0
V
CB
= 鈥?0 V, I
E
=
0
V
CE
= 鈥?0 V, I
B
=
0
V
CE
= 鈥?0 V, I
C
= 鈥? mA
I
C
= 鈥?00 mA, I
B
= 鈥?0 mA
V
CB
= 鈥?0 V, I
E
=
1
mA, f =
200
MHz
V
CB
= 鈥?0 V, I
E
=
0,
f =
1
MHz
180
鈥?/div>
0.2
80
2.2
Min
鈥?5
鈥?5
鈥?
鈥?/div>
0.1
鈥?00
390
鈥?/div>
0.5
Typ
Max
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
錚?/div>
V
MHz
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C
7030
measuring methods for transistors.
Publication date : December
2004
SJC00326AED
1
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