2SA2018H
Transistors
Low-frequency Transistor
2SA2018H
The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes.
!
Applications
For switching, for muting.
!
External dimensions
(Units : mm)
1.6
0.85
(2)
!
Features
1) A collector current is large.
2) Collector saturation voltage is low.
V
CE(sat)
鈮?/div>
250mV
At I
C
= 200mA / I
B
= 10mA
3) Flat lead
0.5 0.5
0.27
(3)
(1)
0.12
0.7
1.0
ROHM : EMT3 Flat lead
EIAJ : SC-89
Abbreviated symbol : BW
!
Absolute maximum ratings
(Ta=25擄C)
Parameter
Collector-base voltage
Collector-emitter voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
鈭?/div>
Single pulse, P
W
=1ms
Symbol
V
CBO
V
CEO
I
C
I
CP
P
C
Tj
Tstg
Limits
15
12
500
1
150
150
鈭?5~+150
Unit
V
V
mA
A
mW
擄C
擄C
鈭?/div>
!
Electrical characteristics
(Ta=25擄C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
DC current
transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
V
CE(sat)
f
T
Cob
Min.
15
12
6
鈭?/div>
270
鈭?/div>
鈭?/div>
鈭?/div>
Typ.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
100
260
6.5
Max.
鈭?/div>
鈭?/div>
鈭?/div>
100
680
250
鈭?/div>
鈭?/div>
Unit
V
V
V
nA
鈭?/div>
mV
MHz
pF
I
C
=10碌A(chǔ)
I
C
=1mA
I
E
=10碌A(chǔ)
V
CB
=15V
V
CE
=2V / I
C
=10mA
I
C
=200mA / I
B
=10mA
V
CE
=2V , I
E
=10mA , f
T
=100MHz
V
CB
=10V , I
E
=0A , f=1MHz
Conditions
!
Packaging specifications and h
FE
Package name
Code
Type
2SA2018H
h
FE
Basic ordering unit
(pieces)
Taping
T2L
8000
1.6
(1) Base
(2) Emitter
(3) Collector
2SA2018H相關(guān)型號(hào)PDF文件下載
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