2SA2017
Transistors
Power Transistor (鈭?0V,
鈭?A)
2SA2017
!
Features
1) Low V
CE(sat)
. (Typ. 鈥?.3V at I
C
/I
B
=
鈭?
/
鈭?.2A)
2) Excellent DC current gain characteristics.
3) Pc = 30W (Tc = 25擄C)
4) Wide SOA (safe operating area).
5) Complements the 2SC5574.
!
Absolute maximum ratings
(Ta = 25擄C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
-80
-80
-5
-4
-6
30
150
-55~+150
Unit
V
V
V
A
A(Pulse)
W(Tc = 25擄C)
擄C
擄C
!
Packaging specifications and h
FE
Type
Package
h
FE
Code
Basic ordering unit (pieces)
2SA2017
TO-220FN
E
-
500
!
Electrical characteristics
(Ta = 25擄C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
CE(sat)
h
FE
f
T
Cob
Min.
鈭?0
鈭?0
鈭?
-
-
-
-
100
-
-
Typ.
-
-
-
-
-
-
-
-
12
80
Max.
-
-
-
鈭?0
鈭?0
鈭?.5
鈭?.5
200
-
-
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
V
V
-
MHz
pF
I
C
=
鈭?mA
I
C
=
鈭?0碌A(chǔ)
I
E
=
鈭?0碌A(chǔ)
V
CB
=
鈭?0V
V
EB
=
鈭?V
I
C
/I
B
=
鈭?A/鈭?.2A
I
C
/I
B
=
鈭?A/鈭?.2A
V
CE
/I
C
=
鈭?V/鈭?A
V
CE
=
鈭?2V
, I
E
= 0.5A
V
CB
=
鈭?0V
, I
E
= 0A , f = 1MHz
Conditions
1
