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2SA2010 Datasheet

  • 2SA2010

  • Silicon PNP epitaxial planer type

  • 2頁(yè)

  • PANASONIC

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Transistors
2SA2010
Silicon PNP epitaxial planer type
Unit: mm
For DC-DC converter
For various driver circuits
I
Features
鈥?/div>
Low collector to emitter saturation voltage V
CE(sat)
, large current
capacitance
鈥?/div>
High-speed switching
鈥?/div>
Mini type 3-pin package, allowing downsizing and thinning of the
equipment.
鈥?/div>
Complementary pair with 2SC5592
1
0.40
+0.10
鈥?.05
3
0.16
+0.10
鈥?.06
1.50
+0.25
鈥?.05
2.8
+0.2
鈥?.3
2
(0.95) (0.95)
1.9
鹵0.1
2.90
+0.20
鈥?.05
10擄
1.1
+0.2
鈥?.1
(0.65)
I
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
*
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Rating
鈭?5
鈭?5
鈭?
鈭?0
鈭?.5
600
150
鈭?5
to
+150
Unit
V
V
V
A
A
mW
擄C
擄C
Marking Symbol: AS
Note) *: Measure on the ceramic substrate at 15
15
0.6 mm
3
.
I
Electrical Characteristics
T
a
=
25擄C
3擄C
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
*1
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1
h
FE2
V
CE(sat)
C
ob
f
T
t
on
t
stg
t
off
Conditions
V
CB
= 鈭?0
V, I
E
=
0
I
C
= 鈭?0 碌A(chǔ),
I
E
=
0
I
C
= 鈭?
mA, I
B
=
0
I
E
= 鈭?0 碌A(chǔ),
I
C
=
0
V
CE
= 鈭?
V, I
C
= 鈭?00
mA
V
CE
= 鈭?
V, I
C
= 鈭?.5
A
I
C
= 鈭?
A, I
B
= 鈭?0
mA
I
C
= 鈭?.5
A, I
B
= 鈭?0
mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
V
CB
= 鈭?0
V, I
E
=
50 mA
f
=
200 MHz
Min
鈭?5
鈭?5
鈭?
200
100
Typ
0 to 0.1
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini Type Package (3-pin)
1.1
+0.3
鈥?.1
Max
鈭?/div>
0.1
Unit
碌A(chǔ)
V
V
V
560
鈭?40
鈭?70
40
180
35
110
10
鈭?20
Collector to emitter saturation voltage
*1
mV
mV
pF
MHz
ns
ns
ns
Collector output capacitance
Transition frequency
Turn-on time
*2
Storage time
*2
Turn-off time
*2
Note) *1: Rank classification
*2: Reference to the measurement circuit.
0.4
鹵0.2
5擄
1

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