2SA1832FT
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1832FT
Audio frequency General Purpose Amplifier Applications
Unit: mm
High voltage: V
CEO
=
鈭?0
V
High current: I
C
=
鈭?50
mA (max)
High h
FE
: h
FE
=
120
to 400
Excellent h
FE
linearity
: h
FE
(I
C
=
鈭?.1
mA)/h
FE
(I
C
=
鈭?
mA) = 0.95 (typ.)
路
Complementary to 2SC4738F
路
路
路
路
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
-50
-50
-5
-150
-30
100
125
-55
to 125
Unit
V
V
V
mA
mW
mW
擄C
擄C
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-1B1A
Marking
Type Name
h
FE
Rank
SY
Electrical Characteristics
(Ta
=
25擄C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE
(Note)
V
CE (sat)
f
T
C
ob
Test Condition
V
CB
= -50
V, I
E
=
0
V
EB
= -5
V, I
C
=
0
V
CE
= -6
V, I
B
= -2
mA
I
C
= -100
mA, I
B
= -10
mA
V
CE
= -10
V, I
C
= -1
mA
V
CB
= -10
V, I
E
=
0, f
=
1 MHz
Min
戮
戮
120
鈥?/div>
80
戮
Typ.
戮
戮
戮
-0.1
戮
4
Max
-0.1
-0.1
400
-0.3
戮
7
V
MHz
pF
Unit
mA
mA
Note: h
FE
Classification
(
) Marking symbol
Y (Y): 120 to 140, GR (G): 200 to 400
1
2002-01-16
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