鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Symbol
I
CBO
I
EBO
h
FE1 *
h
FE2
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Turn-on time
Turn-off time
Storage time
V
CE(sat)
f
T
C
ob
t
on
t
off
t
stg
Conditions
V
CB
= 鈭?
V, I
E
=
0
V
CE
= 鈭?
V, I
C
=
0
V
CE
= 鈭?
V, I
C
= 鈭?0
mA
V
CE
= 鈭?
V, I
C
= 鈭?
mA
I
C
= 鈭?0
mA, I
B
= 鈭?
mA
V
CB
= 鈭?0
V, I
E
=
10 mA, f
=
200 MHz
V
CB
=
鈭?
V, I
E
= 0, f = 1 MHz
Refer to the switching time
measurement circuit
800
50
30
鈭?/div>
0.1
1 500
1
12
20
19
鈭?/div>
0.2
V
MHz
pF
ns
ns
ns
Min
Typ
Max
鈭?/div>
0.1
鈭?/div>
0.1
150
Unit
碌A(chǔ)
碌A(chǔ)
錚?/div>
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
Q
50 to 120
R
90 to 150
Ranking is not given for any product.
0.10 max.
(0.375)
Publication date: August 2003
SJC00300AED
1
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