Please refer to 鈥淨uality Grades on NEC Semiconductor Devices鈥?/div>
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.
Electrode Connection
1. Base
2. Collector
3. Emitter
ABSOLUTE MAXIMUM RATINGS (Ta = 25擄C)
擄
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T
(Tc = 25擄C)
P
T
(Ta = 25擄C)
T
j
T
stg
Ratings
鈭?00
鈭?0
鈭?.0
鈭?0
鈭?0
鈭?.0
30
2.0
150
鈭?5
to +150
Unit
V
V
V
A
A
A
W
W
擄C
擄C
* PW
鈮?/div>
300
碌
s, duty cycle
鈮?/div>
10%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16126EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
漏
2002
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