Transistor
2SA1737
Silicon PNP epitaxial planer type
For video amplifier
Unit: mm
s
Features
2.6鹵0.1
4.5鹵0.1
1.6鹵0.2
1.5鹵0.1
q
q
q
1.0
鈥?.2
High transition frequency f
T
.
Small collector output capacitance C
ob
.
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
(Ta=25藲C)
0.4max.
45擄
+0.1
0.4鹵0.08
0.5鹵0.08
1.5鹵0.1
3.0鹵0.15
3
2
1
4.0
鈥?.20
0.4鹵0.04
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
Ratings
鈥?5
鈥?5
鈥?
鈥?00
鈥?0
1
150
鈥?5 ~ +150
Unit
V
V
V
mA
mA
W
藲C
藲C
1:Base
2:Collector
3:Emitter
EIAJ:SC鈥?2
Mini Power Type Package
marking
Marking symbol :
1E
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25藲C)
Symbol
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
V
CE
= 鈥?0V, I
B
= 0
I
C
= 鈥?00碌A(chǔ), I
E
= 0
I
C
= 鈥?mA, I
B
= 0
I
E
= 鈥?00碌A(chǔ), I
C
= 0
V
CE
= 鈥?V, I
C
= 鈥?0mA
I
C
= 鈥?0mA, I
B
= 鈥?mA
V
CB
= 鈥?V, I
E
= 10mA, f = 200MHz
V
CB
= 鈥?0V, I
E
= 0, f = 1MHz
500
2.7
鈥?5
鈥?5
鈥?
60
鈥?0.5
V
MHz
pF
min
typ
max
鈥?0
Unit
碌A(chǔ)
V
V
V
2.5鹵0.1
+0.25
1
1
2
