Power Transistors
2SA1499
Silicon PNP epitaxial planar type
For high-speed switching
0.7鹵0.1
Unit: mm
10.0鹵0.2
5.5鹵0.2
2.7鹵0.2
4.2鹵0.2
蠁3.1鹵0.1
1.4鹵0.1
1.3鹵0.2
0.5
+0.2
鈥?.1
0.8鹵0.1
2.54鹵0.25
5.08鹵0.5
1
2
3
4.2鹵0.2
s
Features
q
q
q
q
High foward current transfer ratio h
FE
High-speed switching
High collector to base voltage V
CBO
Full-pack package which can be installed to the heat sink with
one screw.
(T
C
=25藲C)
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
16.7鹵0.3
14.0鹵0.5
Ratings
鈥?00
鈥?00
鈥?
鈥?.2
鈥?0.6
25
2
150
鈥?5 to +150
Unit
V
V
V
A
A
W
藲C
藲C
Solder Dip
4.0
7.5鹵0.2
1:Base
2:Collector
3:Emitter
TO鈥?20 Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
V
CEO
h
FE1*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 鈥?00V, I
E
= 0
V
EB
= 鈥?V, I
C
= 0
I
C
= 鈥?0mA, I
B
= 0
V
CE
= 鈥?V, I
C
= 鈥?00mA
V
CE
= 鈥?V, I
C
= 鈥?00mA
I
C
= 鈥?00mA, I
B
= 鈥?0mA
I
C
= 鈥?00mA, I
B
= 鈥?0mA
V
CE
= 鈥?0V, I
C
= 鈥?00mA, f = 1MHz
I
C
= 鈥?00mA,
I
B1
= 鈥?0mA, I
B2
= 60mA,
V
CC
= 鈥?00V
15
1.0
3.5
1.0
鈥?00
30
10
鈥?.0
鈥?.2
V
V
MHz
碌s
碌s
碌s
160
min
typ
max
鈥?00
鈥?00
Unit
碌A(chǔ)
碌A(chǔ)
V
FE1
Rank classification
Q
30 to 60
P
50 to 100
O
80 to 160
Rank
h
FE1
1
1
2
3
