Power Transistors
2SA1495
Silicon PNP epitaxial planar type
Unit: mm
7.0鹵0.3
3.5鹵0.2
For high-speed switching
3.0鹵0.2
s
Features
q
q
q
q
7.2鹵0.3
0.8鹵0.2
High foward current transfer ratio h
FE
High-speed switching
High collector to base voltage V
CBO
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
(T
C
=25藲C)
Ratings
鈥?00
鈥?00
鈥?
鈥?.2
鈥?0.6
15
1.3
150
鈥?5 to +150
Unit
1.1鹵0.1
0.85鹵0.1
0.4鹵0.1
1.0鹵0.2
10.0
鈥?.
+0.3
0.75鹵0.1
2.3鹵0.2
4.6鹵0.4
1
2
3
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
1:Base
2:Collector
3:Emitter
I Type Package
3.5鹵0.2
2.0鹵0.2
7.0鹵0.3
Unit: mm
0 to 0.15
V
V
V
10.2鹵0.3
3.0鹵0.2
7.2鹵0.3
1.0 max.
A
W
藲C
藲C
4.6鹵0.4
2.3鹵0.2
1.1鹵0.1
2.5
0.75鹵0.1
0.5 max.
0.9鹵0.1
0 to 0.15
1
2
3
1:Base
2:Collector
3:Emitter
I Type Package (Y)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
V
CEO
h
FE1*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 鈥?00V, I
E
= 0
V
EB
= 鈥?V, I
C
= 0
I
C
= 鈥?0mA, I
B
= 0
V
CE
= 鈥?V, I
C
= 鈥?00mA
V
CE
= 鈥?V, I
C
= 鈥?00mA
I
C
= 鈥?00mA, I
B
= 鈥?0mA
I
C
= 鈥?00mA, I
B
= 鈥?0mA
V
CE
= 鈥?0V, I
C
= 鈥?00mA, f = 1MHz
I
C
= 鈥?00mA,
I
B1
= 鈥?0mA, I
B2
= 60mA,
V
CC
= 鈥?00V
15
1.0
3.5
1.0
鈥?00
30
10
鈥?.0
鈥?.5
V
V
MHz
碌s
碌s
碌s
160
min
typ
max
鈥?00
鈥?00
Unit
碌A(chǔ)
碌A(chǔ)
V
FE1
Rank classification
Q
30 to 60
P
50 to 100
O
80 to 160
Rank
h
FE1
2.5鹵0.2
A
1.0
2.5鹵0.2
1.0
1
1
2
3
