Transistor
2SA1323
Silicon PNP epitaxial planer type
For high-frequency amplification
Complementary to 2SC3314
4.0鹵0.2
Unit: mm
s
Features
q
q
q
0.7鹵0.1
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
鈥?0
鈥?0
鈥?
鈥?0
鈥?0
300
150
鈥?5 ~ +150
Unit
V
V
V
mA
mA
mW
藲C
藲C
1:Emitter
2:Collector
3:Base
1
2
3
1.27 1.27
2.54鹵0.15
EIAJ:SC鈥?2
New S Type Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise figure
Reverse transfer impedance
Common emitter reverse transfer capacitanse
(Ta=25藲C)
Symbol
I
CBO
I
CEO
I
EBO
h
FE*
V
CE(sat)
V
BE
f
T
NF
Z
rb
C
re
Conditions
V
CB
= 鈥?0V, I
E
= 0
V
CE
= 鈥?0V, I
B
= 0
V
EB
= 鈥?V, I
C
= 0
V
CE
= 鈥?0V, I
C
= 鈥?mA
I
C
= 鈥?0mA, I
B
= 鈥?mA
V
CE
= 鈥?0V, I
C
= 鈥?mA
V
CB
= 鈥?0V, I
E
= 1mA, f = 200MHz
V
CB
= 鈥?0V, I
E
= 1mA, f = 5MHz
V
CB
= 鈥?0V, I
E
= 1mA, f = 2MHz
V
CE
= 鈥?0V, I
C
= 鈥?mA, f = 10.7MHz
150
70
鈥?0.1
鈥?0.7
300
2.8
22
1.2
4.0
50
2.0
min
typ
max
鈥?0.1
鈥?00
鈥?0
220
V
V
MHz
dB
鈩?/div>
pF
Unit
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
*
h
FE
Rank classification
B
70 ~ 140
C
110 ~ 220
h
FE
Rank
2.0鹵0.2
marking
+0.2
0.45鈥?.1
s
Absolute Maximum Ratings
(Ta=25藲C)
15.6鹵0.5
Allowing supply with the radial taping.
High transition frequency f
T
.
Optimum for high-density mounting.
3.0鹵0.2
1
1
2
3
