Transistor
2SA1310
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SC3312
Unit: mm
4.0鹵0.2
3.0鹵0.2
0.7鹵0.1
s
Features
q
q
q
q
Allowing supply with the radial taping.
Low noise voltage NV.
High foward current transfer ratio h
FE
.
Optimum for high-density mounting.
(Ta=25藲C)
Ratings
鈥?0
鈥?5
鈥?
鈥?00
鈥?00
300
150
鈥?5 ~ +150
Unit
V
V
V
mA
mA
mW
藲C
藲C
1:Emitter
2:Collector
3:Base
1.27 1.27
marking
1
2
3
+0.2
0.45鈥?.1
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
2.54鹵0.15
EIAJ:SC鈥?2
New S Type Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise voltage
(Ta=25藲C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
V
BE
f
T
NV
Conditions
V
CB
= 鈥?0V, I
E
= 0
V
CE
= 鈥?0V, I
B
= 0
I
C
= 鈥?0碌A(chǔ), I
E
= 0
I
C
= 鈥?mA, I
B
= 0
I
E
= 鈥?0碌A(chǔ), I
C
= 0
V
CE
= 鈥?V, I
C
= 鈥?mA
I
C
= 鈥?00mA, I
B
= 鈥?0mA
V
CE
= 鈥?V, I
C
= 鈥?0mA
V
CB
= 鈥?V, I
E
= 2mA, f = 200MHz
V
CE
= 鈥?0V, I
C
= 鈥?mA, G
V
= 80dB
R
g
= 100k鈩? Function = FLAT
200
150
鈥?0
鈥?5
鈥?
180
700
鈥?0.6
鈥?
V
V
MHz
mV
min
typ
max
鈥?0.1
鈥?
Unit
碌A(chǔ)
碌A(chǔ)
V
V
V
*
h
FE
Rank classification
R
180 ~ 360
S
260 ~ 520
T
360 ~ 700
h
FE
Rank
2.0鹵0.2
s
Absolute Maximum Ratings
15.6鹵0.5
1
1
2
3
