Transistor
2SA1254
Silicon PNP epitaxial planer type
For high-frequency amplification
Complementary to 2SC2206
6.9鹵0.1
2.5鹵0.1
1.0
Unit: mm
0.4
2.4鹵0.2 2.0鹵0.2 3.5鹵0.1
q
q
q
0.85
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25藲C)
0.55鹵0.1
0.45鹵0.05
Ratings
鈥?0
鈥?0
鈥?
鈥?0
鈥?0
400
150
鈥?5 ~ +150
Unit
V
V
V
mA
mA
mW
藲C
藲C
1:Base
2:Collector
3:Emitter
2.5
2.5
3
2
1
EIAJ:SC鈥?1
M Type Mold Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Transition frequency
Collector to emitter saturation voltage
Base to emitter voltage
Noise figure
Reverse transfer impedance
Common emitter reverse transfer capacitance
(Ta=25藲C)
Symbol
I
CBO
I
CEO
I
EBO
h
FE*
f
T
V
CE(sat)
V
BE
NF
Z
rb
C
re
Conditions
V
CB
= 鈥?0V, I
E
= 0
V
CE
= 鈥?0V, I
B
= 0
V
EB
= 鈥?V, I
C
= 0
V
CE
= 鈥?0V, I
C
= 鈥?mA
V
CB
= 鈥?0V, I
E
= 1mA, f = 200MHz
I
C
= 鈥?0mA, I
B
= 鈥?mA
V
CE
= 鈥?0V, I
C
= 鈥?mA
V
CB
= 鈥?0V, I
E
= 1mA, f = 5MHz
V
CB
= 鈥?0V, I
E
= 1mA, f = 2MHz
V
CE
= 鈥?0V, I
C
= 鈥?mA, f = 10.7MHz
70
150
300
鈥?0.1
鈥?0.7
2.8
22
1.2
4.0
50
2.0
min
typ
max
鈥?0.1
鈥?00
鈥?0
220
MHz
V
V
dB
鈩?/div>
pF
Unit
碌A
碌A
碌A
*
h
FE
Rank classification
B
70 ~ 140
C
110 ~ 220
h
FE
Rank
1.25鹵0.05
4.1鹵0.2
High transition frequency f
T
.
Low collector to emitter saturation voltage V
CE(sat)
.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
1.0
4.5鹵0.1
s
Features
1.5
1.5 R0.9
R0.9
1.0鹵0.1
R
0.
7
1
1
2
