Ordering number:EN781F
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1208/2SC2910
High-Voltage Switching
Audio 80W Output Predriver Applications
Features
路 Adoption of FBET process.
路 High breakdown voltage.
路 Excellent linearity of h
FE
and small C
ob
.
路 Fast swtching speed.
Package Dimensions
unit:mm
2006A
[2SA1208/2SC2910]
( ) : 2SA1208
EIAJ:SC-51
SANYO:MP
B:Base
C:Collector
E:Emitter
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Ratings
Unit
(鈥?180
(鈥?160
(鈥?5
(鈥?70
(鈥?140
900
150
V
V
V
mA
mA
mW
藲C
藲C
鈥?5 to +150
Electrical Characteristics
at Ta = 25藲C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Turn-ON Time
Fall Time
Storage Time
Symbol
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
ton
tf
tstg
VCB=(鈥?80V, IE=0
VEB=(鈥?4V, IC=0
VCE=(鈥?5V, IC=(鈥?10mA
VCE=(鈥?10V, IC=(鈥?10mA
VCB=(鈥?10V, f=1MHz
IC=(鈥?30mA, IB=(鈥?3mA
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
100*
150
(2.5)2.0
0.08
(鈥?.14)
0.1
0.2
1.0
0.3
(鈥?.4)
Conditions
Ratings
min
typ
max
(鈥?0.1
(鈥?0.1
400*
MHz
pF
V
碌s
碌s
碌s
Unit
碌A(chǔ)
碌A(chǔ)
* : The 2SA1208/2SC2910 are classified by 10mA h
FE
are follows :
100
R
200
140
S
280
200
T
400
Switching Time Test Circuit
I
C
=10I
B1
=鈥?0I
B2
=10mA (For PNP, the polarity is reversed)
Unit (resistance :
鈩?
capacitance : F)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/8270MH/6080MO/3187AT/3125KI/0193KI, TS(KOTO) No.781-1/4
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