Transistor
2SA1128
Silicon PNP epitaxial planer type
For low-frequency output amplification
Unit: mm
5.0鹵0.2
4.0鹵0.2
q
q
Low collector to emitter saturation voltage V
CE(sat)
.
Optimum for low-voltage operation and for converter circuits.
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
鈥?5
鈥?0
鈥?
鈥?
鈥?0.5
600
150
鈥?5 ~ +150
Unit
V
V
V
A
A
mW
藲C
藲C
13.5鹵0.5
5.1鹵0.2
s
Features
0.45
鈥?.1
1.27
+0.2
0.45
鈥?.1
1.27
+0.2
1 2 3
2.3鹵0.2
2.54鹵0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO鈥?2
EIAJ:SC鈥?3A
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25藲C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 鈥?5V, I
E
= 0
V
CE
= 鈥?0V, I
B
= 0
I
C
= 鈥?0碌A(chǔ), I
E
= 0
I
C
= 鈥?mA, I
B
= 0
I
E
= 鈥?0碌A(chǔ), I
C
= 0
V
CE
= 鈥?V, I
C
= 鈥?.5A
*2
V
CE
= 鈥?V, I
C
= 鈥?A
*2
I
C
= 鈥?00mA, I
B
= 鈥?0mA
*2
I
C
= 鈥?00mA, I
B
= 鈥?0mA
*2
V
CB
= 鈥?0V, I
E
= 50mA, f = 200MHz
V
CB
= 鈥?0V, I
E
= 0, f = 1MHz
150
15
*2
min
typ
max
鈥?00
鈥?
Unit
nA
碌A(chǔ)
V
V
V
鈥?5
鈥?0
鈥?
90
25
鈥?0.4
鈥?.2
220
V
V
MHz
25
pF
Pulse measurement
*1
h
FE
Rank classification
Q
90 ~ 155
R
130 ~ 220
Rank
h
FE1
Note) S Rank V
CEO
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