Transistor
2SA0879
(2SA879)
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SC1573
5.9鹵0.2
Unit: mm
4.9鹵0.2
G
High collector to emitter voltage V
CEO
.
+0.3
+0.2
I
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25藲C)
2.54鹵0.15
Ratings
鈥?50
鈥?00
鈥?
鈥?00
鈥?0
1
150
鈥?5 ~ +150
Unit
V
V
V
mA
mA
0.45
鈥?.1
1.27
1.27
13.5鹵0.5
0.7
鈥?.2
0.7鹵0.1
8.6鹵0.2
I
Features
0.45
鈥?.1
+0.2
藲C
藲C
I
Electrical Characteristics
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25藲C)
Symbol
I
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 鈥?2V, I
B
= 0
I
C
= 鈥?00碌A(chǔ), I
B
= 0
I
E
= 鈥?碌A(chǔ), I
C
= 0
V
CE
= 鈥?0V, I
C
= 鈥?mA
I
C
= 鈥?0mA, I
B
= 鈥?mA
V
CB
= 鈥?0V, I
E
= 10mA, f = 200MHz
V
CB
= 鈥?0V, I
E
= 0, f = 1MHz
50
80
5
10
鈥?00
鈥?
60
220
鈥?.5
V
MHz
pF
min
typ
max
鈥?
Unit
碌A(chǔ)
V
V
*
h
FE
Rank classification
Q
60 ~ 150
R
100 ~ 220
h
FE
Rank
Note.) The Part number in the Parenthesis shows conventional part number.
3.2
W
1
2
3
1:Emitter
2:Collector
3:Base
EIAJ:SC鈥?1
TO鈥?2L Package
1
1
2
3
4
