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2SA0684(2SA684) Datasheet

  • 2SA0684(2SA684)

  • Small-signal device - Small-signal transistor - General-use ...

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Transistors
2SA0683, 2SA0684
(2SA683, 2SA684)
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency power amplification and driver amplification
Complementary to 2SC1383, 2SC1384
鈻?/div>
Features
鈥?/div>
Complementary pair with 2SC1383 and 2SC1384
鈥?/div>
Allowing supply with the radial taping
5.9
鹵0.2
4.9
鹵0.2
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector-base voltage
(Emitter open)
2SA0683
2SA0684
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Symbol
V
CBO
Rating
鈭?0
鈭?0
鈭?5
鈭?0
鈭?
鈭?
鈭?.5
1
150
鈭?5
to
+150
V
A
A
W
擄C
擄C
V
1 2 3
Unit
V
0.45
+0.2
鈥?.1
(1.27)
(1.27)
0.45
+0.2
鈥?.1
13.5
鹵0.5
0.7
+0.3
鈥?.2
0.7
鹵0.1
8.6
鹵0.2
Collector-emitter voltage 2SA0683
(Base open)
2SA0684
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
2.54
鹵0.15
1: Emitter
2: Collector
3: Base
EIAJ: SC-51
TO-92L-A1 Package
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
2SA0683
2SA0684
2SA0683
2SA6084
V
EBO
I
CBO
h
FE1 *2
h
FE2
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V
CE(sat)
V
BE(sat)
f
T
C
ob
I
E
= 鈭?0 碌A(chǔ),
I
C
=
0
V
CB
= 鈭?0
V, I
E
=
0
V
CE
= 鈭?0
V, I
C
= 鈭?00
mA
V
CE
= 鈭?
V, I
C
= 鈭?
A
I
C
= 鈭?00
mA, I
B
= 鈭?0
mA
I
C
= 鈭?00
mA, I
B
= 鈭?0
mA
V
CB
= 鈭?0
V, I
E
=
50 mA, f
=
200 MHz
V
CB
= 鈭?0
V, I
E
=
0, f
=
1 MHz
85
50
鈭?/div>
0.2
鈭?/div>
0.85
200
20
30
鈭?/div>
0.4
鈭?.2
V
V
MHz
pF
V
CEO
I
C
= 鈭?
mA, I
B
=
0
Symbol
V
CBO
Conditions
I
C
= 鈭?0 碌A(chǔ),
I
E
=
0
Min
鈭?0
鈭?0
鈭?5
鈭?0
鈭?
鈭?/div>
0.1
340
V
碌A(chǔ)
錚?/div>
V
Typ
Max
Unit
V
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE
Q
85 to 170
R
120 to 240
S
170 to 340
Note) The part numbers in the parenthesis show conventional part number.
Publication date: November 2002
SJC00001BED
(3.2)
1

2SA0684(2SA684)相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC ...
  • 英文版
    For low-frequency power amplification and driver amplificati...
    PANASONIC
  • 英文版
    For low-frequency power amplification and driver amplificati...
    PANASONIC ...
  • 英文版
    For low-frequency power amplification and driver amplificati...
    PANASONIC
  • 英文版
    For low-frequency power amplification and driver amplificati...
    PANASONIC ...
  • 英文版
    For low-frequency driver amplification Complementary
    PANASONIC
  • 英文版
    For low-frequency driver amplification Complementary
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planer type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planer type
    PANASONIC ...
  • 英文版
    For general amplification Complementary to 2SC1573
    PANASONIC
  • 英文版
    For general amplification Complementary to 2SC1573
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planar type (For low-frequency power a...
    PANASONIC

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