DATA SHEET
THYRISTORS
2S2M, 2S4M
2 A HIGH-SPEED SWITCHING SCR
The 2S2M and 2S4M are P-gate fully diffused mold SCRs
with an average on-current of 2 A. The repeat peak off-voltages
(and reverse voltages) are 200 V and 400 V.
PACKAGE DRAWING (UNIT: mm)
FEATURES
鈥?This transistor is designed for high-speed switching and is
deal for use in commercial frequencies, high-frequency pulse
applications, and inverter applications.
鈥?This transistor features a small and lightweight package and
is easy to handle even on the mounting surface due to its
TO-202AA dimensions. Processing of lead wires and
heatsink (tablet) using jigs is also possible.
鈥?Employs flame-retardant epoxy resin (UL94V-0).
APPLICATIONS
Consumer electronic euipments, ignitors of devices for light
indutry, inverter, and solenoid valve drives
Electrode connection
<1>Cathode
<2>Anode
<3>Gate
Standard weight: 1.4
*TC test bench-mark
ABSOLUTE MAXIMUM RATINGS (Ta = 25擄C)
擄
Parameter
Non-repetitive peak reverse voltage
Non-repetitive peak off-state voltage
Repetitive peak reverse voltage
Repetitive peak off-voltage
Average on-state current
Surge on-state current
High-frequency peak on-state current
Fusing current
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward current
Peak gate reverse voltage
Junction temperature
Storage temperature
Symbol
V
RSM
V
DSM
V
RRM
V
DRM
I
T(AV)
I
TSM
I
TRM
鈭?/div>
i
t
dt
dI
T
/dt
P
GM
P
G(AV)
I
FGM
V
RGM
T
j
T
stg
2
2S2M
2S4M
Ratings
V
V
V
V
A
A
A
A
2
s
A/
碌
s
W
W
A
V
擄C
擄C
Unit
R
GK
= 1 k鈩?/div>
R
GK
= 1 k鈩?/div>
R
GK
= 1 k鈩?/div>
R
GK
= 1 k鈩?/div>
Refer to Figure 6 snd 7.
300
500
300
500
200
400
200
400
2 (Tc = 77擄C, Single half-wave,
胃
= 180擄)
20 (f = 50 Hz, Sine half-wave, 1 cycle)
15 (Tc = 65擄C, f = 10 kp.p.s, t
p
= 10
碌
s)
1.6 (1 ms鈮鈮?0 ms)
50
0.5 (f鈮?0 Hz, Duty鈮?0%)
0.1
0.2 (f鈮?0 Hz, Duty鈮?0%)
6
鈭?0
to +125
鈭?5
tp +150
Refer to Figure 2.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13535EJ2V0DS00 (2nf edition)
Date Published April 2002 N CP(K)
Printed in Japan
漏
2002
1998
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THYRISTORS 2 A HIGH-SPEED SWITCHING SCR
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THYRISTORS 2 A HIGH-SPEED SWITCHING SCR
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Silicon Controlled Rectifier, 4A I(T)RMS, 400V V(DRM), 400V ...
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Silicon Controlled Rectifier, 4A I(T)RMS, 400V V(DRM), 400V ...
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Silicon Controlled Rectifier, 4A I(T)RMS, 400V V(DRM), 400V ...
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