IGBTs
2PG401
Insulated Gate Bipolar Transistor
s
Features
q
High breakdown voltage: V
CES
= 400V
q
Allowing to control large current: I
C(peak)
= 130A
q
Allowing to provide with the surface mounting package
7.2鹵0.3
0.8鹵0.2
unit: mm
7.0鹵0.3
3.0鹵0.2
3.5鹵0.2
s
Applications
q
For flash-light for use in a camera
1.1鹵0.1
0.85鹵0.1
0.4鹵0.1
1.0鹵0.2
s
Absolute Maximum Ratings
(T
C
= 25擄C)
Parameter
Collector to emitter voltage
Gate to emitter voltage
Collector current
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
T
C
= 25擄C
Ta = 25擄C
Symbol
V
CES
V
GES
I
C
I
CP
P
C
T
ch
T
stg
Ratings
400
鹵8
5
130
15
1.3
150
鈭?5
to +150
Unit
V
V
A
A
W
擄C
擄C
1
4.6鹵0.4
2
3
10.0
鈥?.
+0.3
0.75鹵0.1
2.3鹵0.2
1: Gate
2: Collector
3: Emitter
I Type Package
s
Electrical Characteristics
(T
C
= 25擄C)
Parameter
Collector to emitter cut-off current
Gate to emitter leakage current
Collector to emitter breakdown voltage
Gate threshold voltage
Collector to emitter
saturation voltage
Input capacitance (Common Emitter)
Turn-on time (delay time)
Rise time
Turn-off time (delay time)
Fall time
Symbol
I
CES
I
GES
V
CES
V
GE(th)
V
CE(sat)
C
ies
t
d(on)
t
r
t
d(off)
t
f
V
CC
= 300V, I
C
= 130A
V
GE
= 5V, R
g
= 25鈩?/div>
Conditions
V
CE
= 320V, V
GE
= 0
V
GE
= 鹵8V, V
CE
= 0
I
C
= 1mA, V
GE
= 0
V
CE
= 10V, I
C
= 1mA
V
GE
= 5V, I
C
= 5A
V
GE
= 5V, I
C
= 130A
V
CE
= 10V, V
GE
= 0, f = 1MHz
1930
130
1.4
350
1.5
400
0.5
1.5
2
10
min
typ
max
10
鹵1
Unit
碌A(chǔ)
碌A(chǔ)
V
V
V
pF
ns
碌s
ns
碌s
1
1
