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Planar Process for Reliability
Fast Switching
High-Frequency Power Transistors
For Complementary Use with Each Other
15 mj Reverse Energy Rating with I
C
= 10MA and 4 V Reverse Bias
Similar to 2N5004 and 2N5005 but JEDEC TO-254AA Package
Leads can be Formed
All Terminals Isolated from the Case
Complimentary
Power Transistors
in Hermetic Isolated
TO-254AA Packages
JAN/TX/TXV/JANS
DESCRIPTION:
These power transistors are produced by PPC's MULTIPLE DIFFUSED
PLANAR process. This technology produces high voltage devices with
excellent switching speeds, frequency response, gain linearity, saturation
voltages, high current gain, and safe operating areas. These devices have
excellent unclamped and clamped reverse energy ratings with the base to
emitter reversed biased.
Ultrasonically bonded wire leads and gold eutectic die bonding are utilized to
permit operating temperature to 200
擄
C. The hermetically sealed package
insures maximum reliability and long life. The isolated low profile package
allows for easy PC board fit.
TO-254AA
ABSOLUTE MAXIMUM RATINGS:
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
C
I
B
T
STG
T
J
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Storage Temperature
Operating Junction Temperature
Lead Temperature 1/16" from cast for 10 sec.
Unclamped Inductive Load Energy
2N7372
- 100
- 80
- 5.5
5
10
2
-65 to 200
-65 to 200
300
15
58
33
3
2N7373
100
80
5.5
5
10
2
UNITS
V
V
V
A
A
A
擄
C
擄
C
擄
C
mj
58
33
3
W
W
擄
C/W
P
T
Continuous Device
Dissipation T
C
= 25
擄
C
T
C
= 100
擄
C
胃
JC
Thermal Resistance Junction to Case
MSC1343.PDF 010-29-99
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