TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/622
Devices
2N7368
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ T
C
= 25
0
C
(1)
Operating & Storage Junction Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
B
I
C
P
T
T
J
,
T
stg
Symbol
R
胃
JC
0
Value
80
80
7.0
4.0
10
115
-65 to +200
Max.
1.5
Units
Vdc
Vdc
Vdc
Adc
Adc
W
0
C
Unit
0
C/W
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
TO-254*
1)
Derate linearly 0.657 W/ C for T
C
> 25 C
*See appendix A for
package outline
0
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 0.2 Adc
Collector-Emitter Cutoff Current
V
CE
= 70 Vdc
Collector-Emitter Cutoff Current
V
CE
= 80 Vdc, V
BE
= 1.5 Vdc
Emitter-Base Cutoff Current
V
EB
= 7.0 Vdc
V
CEO
(
sus
)
I
CES
I
CEX
I
EBO
80
1.0
1.0
1.0
Vdc
mAdc
mAdc
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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