2N7051
2N7051
NPN Darlington Transistor
鈥?This device designed for applications requiring extremely high gain at
collector currents to 1.0A and high breakdown voltage.
鈥?Sourced from Process 06.
鈥?See 2N7052 for Characteristics.
TO-92
1
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings*
T
A
=25擄C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Storage Temperature
Parameter
Ratings
100
100
12
1.5
-55 ~ 150
Units
V
V
V
A
擄C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These rtings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
A
=25擄C unless otherwise noted
Symbol
Off Characteristics
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
CES
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
h
fe
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Small Signal Current Gain
On Characteristics *
V
CE
= 5.0V, I
C
= 100mA
V
CE
= 5.0V, I
C
= 1.0A
I
C
= 100mA, I
B
= 0.1mA
I
C
= 100mA, V
BE
=5.0V
I
C
= 100mA, V
CE
=5.0V
V
CE
=5.0V, I
C
= 100mA,
f = 20MHz
200
10
100
10,000
1,000
20,000
1.5
2.0
V
V
MHz
Parameter
Test Condition
I
C
= 1.0mA, I
B
= 0
I
C
= 100碌A(chǔ), I
B
= 0
I
E
= 1.0mA, I
C
= 0
V
CB
= 80V, I
E
= 0
V
CE
= 80V, I
E
= 0
V
EB
= 7.0V, I
C
= 0
Min.
100
100
12
0.1
0.2
0.1
Typ.
Max.
Units
V
V
V
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Small Signal Characteristics
* Pulse Test: Pulse Width
鈮?/div>
300碌s, Duty Cycle
鈮?/div>
1.0%
漏2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
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