2N7002W
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
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Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
G
E
D
G
H
K
J
L
M
NEW PRODUCT
SOT-323
A
D
TOP VIEW
S
B
C
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.30
1.15
2.00
0.30
1.20
1.80
0.0
0.90
0.25
0.10
Max
0.40
1.35
2.20
0.40
1.40
2.20
0.10
1.00
0.40
0.25
0.65 Nominal
Mechanical Data
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Case: SOT-323, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: K72
Weight: 0.006 grams (approx.)
All Dimensions in mm
Maximum Ratings
Drain-Source Voltage
@ T
A
= 25擄C unless otherwise specified
Symbol
V
DSS
V
DGR
Continuous
Pulsed
Continuous
Continuous @ 100擄C
Pulsed
V
GSS
I
D
P
d
R
qJA
T
j
, T
STG
2N7002W
60
60
鹵20
鹵40
115
73
800
200
1.60
625
-55 to +150
Units
V
V
V
mA
mW
mW/擄C
K/W
擄C
Characteristic
Drain-Gate Voltage R
GS
攏
1.0MW
Gate-Source Voltage
Drain Current (Note 1)
Total Power Dissipation (Note 1)
Derating above T
A
= 25擄C
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width
攏
300ms, duty cycle
攏
2%.
DS30099 Rev. 4P-1
1 of 3
2N7002W