2N7000/7002, VQ1000J/P, BS170
N-Channel Enhancement-Mode MOSFET Transistors
Product Summary
Part Number
2N7000
2N7002
VQ1000J
VQ1000P
BS170
60
V
(BR)DSS
Min (V)
r
DS(on)
Max (W)
5 @ V
GS
= 10 V
7.5 @ V
GS
= 10 V
5.5 @ V
GS
= 10 V
5.5 @ V
GS
= 10 V
5 @ V
GS
= 10 V
V
GS(th)
(V)
0.8 to 3
1 to 2.5
0.8 to 2.5
0.8 to 2.5
0.8 to 3
I
D
(A)
0.2
0.115
0.225
0.225
0.5
Features
D
D
D
D
D
Low On-Resistance: 2.5
W
Low Threshold: 2.1 V
Low Input Capacitance: 22 pF
Fast Switching Speed: 7 ns
Low Input and Output Leakage
Benefits
D
D
D
D
D
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
Applications
D
Direct Logic-Level Interface: TTL/CMOS
D
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D
Battery Operated Systems
D
Solid-State Relays
TO-226AA
(TO-92)
S
1
G
G
2
S
D
3
2
1
TO-236
(SOT-23)
3
D
Top View
Top View
2N7000
Dual-In-Line
D
1
N
S
1
G
1
NC
G
2
N
S
2
D
2
1
2
3
4
5
6
7
Top View
Plastic: VQ1000J
Sidebraze: VQ1000P
14
13
12
11
10
9
8
D
4
S
4
G
4
NC
G
3
G
S
3
D
3
N
S
3
Top View
BS170
2
D
1
N
TO-92-18RM
(TO-18 Lead Form)
2N7002 (72)*
*Marking Code for TO-236
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70226.
Siliconix
S-52429鈥擱ev. E, 28-Apr-97
1