Advanced Small Signal MOSFET
FEATURES
n
Fast Switching Times
n
Improved Inductive Ruggedness
n
Lower Input Capacitance
n
Extended Safe Operating Area
n
Improved High Temperature Reliability
2N7000BU/2N7000TA
BV
DSS
= 60 V
R
DS(on)
= 5.0
惟
I
D
= 200 mA
TO-92
1.Source 2. Gate 3. Drain
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
P
D
T
J
, T
STG
T
L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25鈩?
Continuous Drain Current (T
C
=100鈩?
Drain Current-Pulsed
Gate-to-Source Voltage
Total Power Dissipation (T
C
=25鈩?
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8? from case for 5-seconds
鈶?/div>
Value
60
200
110
1000
鹵30
400
3.2
- 55 to +150
Units
V
mA
mA
V
mW
mW/鈩?/div>
鈩?/div>
300
Thermal Resistance
Symbol
R
胃JA
Characteristic
Junction-to-Ambient
Typ.
--
Max.
312.5
Units
鈩?W
Rev. B
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