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.,,

鈥?..

.

.-

N-CHANNEL

ISSUE

2-

MARCH

ENHANCEMENT

MODE VERTICAL DMOS FET

94

FEATURES

*

*R

60 Volt VcEo

0S(0.)

= 5 鈥?

2N7000P

I

D

G

s

v

ABSOLUTE MAXIMUM

PARAMETER

Drain-Source

Continuous

Pulsed

Voltage

Drain Current

RATINGS.

SYMBOL

鈥楧S

at Tamb=250C

ID

鈥斺€?鈥?/div>

lDM

鈥楪S

鈥?/div>

lJ&h!sJ

VALUE

60

200

~

鈥樷€?/div>

UNIT

v

鈥?/div>

mA

v

Drain Current鈥?

Voltage

at Tamb=250C

Temperature

鈥斺€?/div>

Range

鈥?00

i 40

Gate-Source

Power

Dissipation

P

tot

Ti:T~tg

-1

---鈥?

2A.

mW

-55to

+150

\

鈥渃

~

Operating

and Storage

PARAMETER

Drain-Source

Voltage

Gate-Source

鈥?

Gate-Body

Breakdown

SYMBOL

BVDss

MIN.

60

MAX.

UNIT

v

CONDITIONS.

ID=l OIA, VGsOV

.鈥?/div>

VGs

Threshold

Leakage

Voltage

鈥?/div>

鈥楪S(th)

lGSS

_ 0.8

3

10

1

v

nA--

UA

mA

鈥?/div>

mA

lD=lmA,

-

vG@

鈥樷€?/div>

VD=

15V,

vD~=ov

Zero Gate Voltege

鈥?

鈥斺€斺€?

Drain Current

lD~s

q+f 75

On-State

鈥斺€?.鈥?/div>

鈥?.鈥斺€?/div>

~~

Drain Current(1)

鈥?鈥?/div>

.鈥斺€?/div>

On-State

VD~48V,

VDs48V,

VDSIOV,

VG~O

VG~OV,

VGF4.5V

T=125擄C(2)

ID(m)

Static Drain-Source

Voltage (1)

Static Drain-Source

Resistance (1)

鈥楧S(on)

RDs&

~

2.5

0.4

5

T

V -

v

鈥?

VGs.=10V,lD.500mA

On-State

;;~;;;$;%--鈥?/div>

1鈥?/div>

(2)

__, _

Output

1

(2)

c,,,

input Capacitance

鈥斺€? .鈥斺€?

鈥斺€斺€?/div>

Common Source

Capacitance

(2)

鈥楻eve;se

Transfer

AL-P鈥揈.-.;

c

0ss

~

鈥? 鈥?鈥?/div>

Capacitance

I

25

I

pF

-4

VD-725V,

VGs:OV,

f= 1MHz

pF

鈥斺€?/div>

鈥斺€斺€?/div>

鈥?--鈥撯€?/div>

TurmOn Time (2)(3)

10

ns

\ VDD=15V,

lD=500mA

鈥?on)

~ Rg=25Q, RL=25Q

Turn-Off Time (2)(3)

10

ns

Voff)

I

) Measured

under pulsed conditions.

Width=300ps.

Duty cycle <2% (2) Sample test.

1)Switching

times measured with 50Q source impedance

and <5ns rise time on a pulse generator

3-13

5

2N7000P 產(chǎn)品屬性

制造商
Diodes Inc.
晶體管極性
N-Channel
汲極/源極擊穿電壓
60 V
閘/源擊穿電壓
40 V
漏極連續(xù)電流
0.2 A
配置
Single
最大工作溫度
+ 150 C
安裝風(fēng)格
Through Hole
封裝 / 箱體
TO-92
最小工作溫度
- 55 C
功率耗散
400 mW

2N7000P相關(guān)型號(hào)PDF文件下載

型號(hào)

版本

描述

廠商

下載
2N700

英文版

TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 50MA I(C) | TO-72

ETC

2N700
2N700

英文版

TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 50MA I(C) | TO-72

2N700
2N702

英文版

TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 50MA I(C) | TO-18

ETC

2N702
2N702

英文版

TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 50MA I(C) | TO-18

2N702
2N703

英文版

Small Signal Transistors

CENTRAL

2N703
2N703

英文版

Small Signal Transistors

CENTRAL [C...

2N703
2N705

英文版

silicon transistors UHF/VHF power transistors

ETC

2N705
2N705

英文版

silicon transistors UHF/VHF power transistors

ETC [ETC]

2N705
2N706

英文版

TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 50MA I(C) | TO-206AA

ETC

2N706
2N706

英文版

TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 50MA I(C) | TO-206AA

2N706
2N707

英文版

TRANSISTOR | BJT | NPN | 28V V(BR)CEO | TO-18

ETC

2N707
2N707

英文版

TRANSISTOR | BJT | NPN | 28V V(BR)CEO | TO-18

2N707
2N708

英文版

Small Signal Transistors

CENTRAL

2N708
2N708

英文版

Small Signal Transistors

CENTRAL [C...

2N708
2N709

英文版

TRANSISTOR | BJT | NPN | 6V V(BR)CEO | TO-18

ETC

2N709
2N709

英文版

TRANSISTOR | BJT | NPN | 6V V(BR)CEO | TO-18

2N709
2N7000

英文版

Small Signal MOSFET 200 mAmps, 60 Volts N-Channel TO-92

ONSEMI

2N7000
2N7000

英文版

N-Channel Enhancement Mode Field Effect Transistor

FAIRCHILD

2N7000
2N7000

英文版

N-Channel 60-V (D-S) MOSFET

2N7000
2N7000

英文版

N-CHANNEL-ENHANCEMENT

TRSYS

2N7000

2N7000P Datasheet

PDF預(yù)覽

2N7000P 產(chǎn)品屬性

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