2N7000CSM
MECHANICAL DATA
Dimensions in mm (inches)
N鈥揅HANNEL
ENHANCEMENT MODE
MOS TRANSISTOR
0.31 rad.
(0.012)
0.51 鹵 0.10
(0.02 鹵 0.004)
2.54 鹵 0.13
(0.10 鹵 0.005)
3
FEATURES
0.76 鹵 0.15
(0.03 鹵 0.006)
2
1
鈥?V
(BR)DSS
= 60V
鈥?RDS
(ON)
= 5
W
A
1.40
(0.055)
max.
1.91 鹵 0.10
(0.075 鹵 0.004)
3.05 鹵 0.13
(0.12 鹵 0.005)
A=
0.31 rad.
(0.012)
鈥?I
D
= 200mA
鈥?Hermetic Ceramic Surface Mount
package
1.02 鹵 0.10
(0.04 鹵 0.004)
SOT23 CERAMIC
(LCC1 PACKAGE)
Underside View
PAD 1 鈥?Gate
PAD 2 鈥?Source
PAD 3 鈥?Drain
鈥?Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25擄C unless otherwise stated)
V
DS
V
GS
I
D
I
DM
P
D
T
j
T
stg
Drain 鈥?Source Voltage
Gate 鈥?Source Voltage
Drain Current
Pulsed Drain Current *
Power Dissipation
Storage Temperature Range
@ T
CASE
= 25擄C
Operating Junction Temperature Range
@ T
CASE
= 25擄C
60V
鹵40V
200mA
500mA
300mW
鈥?5 to 150擄C
鈥?5 to 150擄C
* Pulse width limited by maximum junction temperature.
Magnatec.
Telephone +44(0)1455 554711.
Fax +44(0)1455 558843.
E-mail:
magnatec@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 8/00
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