Semiconductor
2N6975, 2N6976,
2N6977, 2N6978
5A, 400V and 500V N-Channel IGBTs
Package
JEDEC TO-204AA
BOTTOM VIEW
EMITTER
COLLECTOR
(FLANGE)
April 1995
Features
鈥?5A, 400V and 500V
鈥?V
CE(ON)
2V
鈥?T
FI
1碌s, 0.5碌s
鈥?Low On-State Voltage
鈥?Fast Switching Speeds
鈥?High Input Impedance
GATE
Applications
鈥?Power Supplies
鈥?Motor Drives
鈥?Protection Circuits
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
Description
The 2N6975, 2N6976, 2N6977 and the 2N6978 are n-channel
enhancement-mode insulated gate bipolar transistors (IGBTs)
designed for high-voltage, low on-dissipation applications such as
switching regulators and motor drivers. These types can be operated
directly from low-power integrated circuits.
E
PACKAGING AVAILABILITY
PART NUMBER
2N6975
2N6976
2N6977
2N6978
PACKAGE
TO-204AA
TO-204AA
TO-204AA
TO-204AA
BRAND
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Speci鏗乪d.
2N6975/2N6977
(Note 1)
400
400
5
鹵20
5
10
100
0.8
-55 to +150
2N6976/2N6978
(Note 1)
500
500
5
鹵20
5
10
100
0.8
-55 to +150
UNITS
V
V
V
V
A
A
W
W/
o
C
o
C
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
CES
Collector-Gate Voltage (R
GE
= 1M鈩? . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
CGR
Reverse Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
CES(REV.)
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GE
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Power Dissipation Total at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> +25
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . T
J
, T
STG
NOTE:
1. JEDEC registered value.
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.
Copyright
漏
Harris Corporation 1995
File Number
2297.2
3-1
INTERSIL
1
2
3
4
