LAB
MECHANICAL DATA
Dimensions in mm (inches)
SEME
2N6849
P鈥揅HANNEL
POWER MOSFETs
V
DSS
I
D(cont)
R
DS(on)
FEATURES
鈥?Single pulse avalanche energy rated
鈥?SOA is power dissipation limited
鈥?Nanosecond switching speeds
鈥?Linear transfer characteristics
鈥?High input impedance
8 .8 9 (0 .3 5 )
9 .4 0 (0 .3 7 )
7 .7 5 (0 .3 0 5 )
8 .5 1 (0 .3 3 5 )
5 .0 8 (0 .2 0 0 )
ty p .
4 .1 9 (0 .1 6 5 )
4 .9 5 (0 .1 9 5 )
0 .6 6 (0 .0 2 6 )
1 .1 4 (0 .0 4 5 )
0 .8 9 m a x .
(0 .0 3 5 )
7 .7 5 (0 .3 0 5 )
8 .5 1 (0 .3 3 5 )
d ia .
0 .7 1 (0 .0 2 8 )
0 .8 6 (0 .0 3 4 )
!
2 .5 4
(0 .1 0 0 )
- 100V
- 6.5A
0.30
W
1 2 .7 0
(0 .5 0 0 )
m in .
4 5 擄
TO鈥?9 METAL PACKAGE
Underside View
Pin 2 = Base
Pin 3 = Collector
Pin 1 = Emitter
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25擄C unless otherwise stated)
V
GS
V
DS
V
DG
I
D
I
DM
E
AS
P
D
T
J
, T
STG
R
q
JC
R
q
JA
Gate 鈥?Source Voltage*
Drain 鈥?Source Voltage*
Drain 鈥?Gate Voltage (R
GS
= 20k
W
)*
Continuous Drain Current @ T
C
= 25擄C*
@ T
C
= 100擄C*
Pulsed Drain Current
2*
Single Pulse Avalanche Current
3
Power Dissipation
@ T
C
= 25擄C*
Linear Derating Factor*
Operating and Storage Junction Temperature Range*
Thermal Resistance Junction to Case*
Thermal Resistance Junction to Ambient
鹵20V
-100V
-100V
鈥?.5A
鈥?.1A
鈥?5A
500mJ
25W
0.2W/擄C
鈥?5 to +150擄C
5擄C/W
175擄C/W
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Prelim. 9/00