PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 聳 MARCH 94
FEATURES
* 100 Volt V
CEO
* Gain of 20 at I
C
= 0.5 Amp
* P
tot
=1 Watt
2N6728
2N6729
2N6730
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
= 25擄C
SYMBOL 2N6728
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
-60
-60
2N6729
-80
-80
-5
-2
-1
1
E-Line
TO92 Compatible
2N6730
-100
-100
UNIT
V
V
V
A
A
W
擄C
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
PARAMETER
SYMBOL
2N6728
2N6729
2N6730
UNIT CONDITIONS.
MIN. MAX MIN. MAX MIN. MAX
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
Transition
Frequency
Collector Base
Capacitance
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(on)
h
FE
f
T
C
CB
80
50
20
50
-60
-60
-5
-1
-1
-0.5
-0.35
-1.2
250
500
30
3-9
80
50
20
50
-80
-80
-5
-1
-1
-0.5
-0.35
-1.2
250
500
30
80
50
20
50
-100
-100
-5
V
V
V
碌
A
碌
A
碌
A
碌
A
I
C
=-0.1mA, I
E
=0
I
C
=-1mA, I
B
=0*
I
E
=-1mA, I
C
=0
V
CB
=-60V, I
E
=0
V
CB
=-80V, I
E
=0
V
CB
=-100V, I
E
=0
V
EB
=-5V, I
C
=0
I
C
=-250mA,I
B
=-10mA*
I
C
=-250mA,I
B
=-25mA*
IC=-250mA, V
CE
=-1V*
I
C
=-50mA, V
CE
=-1V*
I
C
=-250mA, V
CE
=-1V*
I
C
=-500mA, V
CE
=-1V*
-1
-1
-0.5 V
-0.35
-1.2
250
500
30
V
MHz I
C
=-50mA, V
CE
=-10V
pF
V
CE
=-10V, f=1MHz
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