Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
2N6707
TO-237
Plastic Package
General Purpose Medium Power Amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25潞C)
DESCRIPTION
SYMBOL
V
CBO
Collector Base Voltage
V
CEO
Collector Emitter Voltage
V
EBO
Emitter Base Voltage
I
C
Collector Current Continuous
P
D
Total Power Dissipation
T
j
, T
stg
Operating And Storage Junction
Temperature Range
VALUE
100
80
5
1.5
850
-55 to +150
UNIT
V
V
V
A
mW
潞C
ELECTRICAL CHARACTERISTICS (Ta=25 潞 C Unless Specified Otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
V
CEO
I
C
=10mA, I
B
=0
Collector Emitter Voltage
V
CBO
Collector Base Voltage
I
C
=100碌A(chǔ), I
E
=0
V
EBO
Emitter-Base Voltage
I
E
=10碌A(chǔ), I
C
=0
I
CBO
V
CB
=100V, I
E
=0
Collector Cut off Current
I
EBO
V
EB
=4V, I
C
=0
Emitter Cut off Current
h
FE
I
C
=50mA,V
CE
=2V
DC Current Gain
I
C
=250mA,V
CE
=2V
I
C
=500mA,V
CE
=2V
V
CE(sat)
I
C
=500mA,I
B
=50mA
Collector Emitter Saturation Voltage
I
C
=1A,I
B
=100mA
f
T
V
CE
=10V, I
C
=200mA,
Transition Frequency
MIN
80
100
5
MAX
0.1
0.1
40
40
25
250
0.5
1
400
UNIT
V
V
V
碌A(chǔ)
碌A(chǔ)
50
V
V
MHz
Continental Device India Limited
Data Sheet
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