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2N6660 Datasheet

  • 2N6660

  • Enhancement Mode MOSFETs

  • Supertex   Supertex

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2N6660
2N6661
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BV
DSS
/
BV
DGS
60V
90V
R
DS(ON)
(max)
3.0鈩?/div>
4.0鈩?/div>
I
D(ON)
(min)
1.5A
1.5A
Order Number / Package
TO-39
2N6660
2N6661
High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process
Flows and Ordering Information.
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex鈥檚 well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex鈥檚 vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Features
s
Free from secondary breakdown
s
Low power drive requirement
s
Ease of paralleling
s
Low C
ISS
and fast switching speeds
s
Excellent thermal stability
s
Integral Source-Drain diode
s
High input impedance and high gain
s
Complementary N- and P-channel devices
Package Options
Applications
s
Motor controls
s
Converters
s
Amplifiers
s
Switches
s
Power supply circuits
s
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
DGS
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
BV
DSS
BV
DGS
鹵
20V
-55擄C to +150擄C
300擄C
TO-39
Case: DRAIN
Note: See Package Outline section for dimensions.
7-3

2N6660 產(chǎn)品屬性

  • Supertex

  • MOSFET

  • N-Channel

  • 60 V

  • +/- 20 V

  • 0.41 A

  • 3 Ohms

  • Single

  • + 150 C

  • Through Hole

  • TO-39

  • Bag

  • - 55 C

  • 6.25 W

  • 500

2N6660相關(guān)型號(hào)PDF文件下載

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