Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR TRANSISTOR
2N657
TO-39
Metal Can Package
General Purpose Transistor.
ABSOLUTE MAXIMUM RATINGS (Ta=25潞C unless specified otherwise)
DESCRIPTION
SYMBOL
VALUE
V
CEO
100
Collector Emitter Voltage
V
CBO
Collector Base Voltage
100
Emitter Base Voltage
Collector Current
Power Dissipation @ Ta=25潞C
Derate Above 25潞C
Power Dissipation@ Tc=25潞C
Derate Above 25潞C
Operating And Storage Junction
Temperature Range
V
EBO
I
C
P
D
P
D
T
j
, T
stg
8.0
0.5
1.0
5.7
4.0
22.8
-65 to +200
UNITS
V
V
V
A
W
mW/潞C
W
mW/潞C
潞C
ELECTRICAL CHARACTERISTICS (Ta=25潞C unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
V
CEO
I
C
=250碌A(chǔ),I
B
=0
Collector Emitter Voltage
V
CBO
I
C
=100碌A(chǔ),I
E
=0
Collector Base Voltage
Emitter Base Voltage
Collector Cut off Current
DC Current Gain
Collector Emitter Saturation Voltage
V
EBO
I
CBO
h
FE
*V
CE(Sat)
I
C
=250碌A(chǔ),Ic=0
V
CB
=30V, I
E
=0
I
C
=200mA,V
CE
=10V
I
C
=200mA,I
B
=40mA
MIN
100
100
8.0
MAX
UNITS
V
V
V
碌A(chǔ)
V
10
30
90
4.0
SMALL SIGNAL CHARACTERISTICS
Input Impedance *
| h
fe
|
I
B
=8mA, V
CE
=10V
0.5
K鈩?/div>
*Pulse Test: Pulse Length= 300碌s, Duty Cycle <2%
Continental Device India Limited
Data Sheet
Page 1 of 3
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