01/99
B-27
2N6550
N-Channel Silicon Junction Field-Effect Transistor
樓 Low-Noise, High Gain Amplifier
Absolute maximum ratings at T
A
=25隆C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuious Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Junction Temperature (Operating & Storage)
鈥?20 V
50 mA
400 mW
2.3 mW/擄C
鈥?65擄C to +200擄C
At 25擄C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current (Pulsed)
2N6550
Min
V
(BR)GSS
I
GSS
I
DSS
V
GS(OFF)
10
鈥?0.3
100
鈥?20
鈥?
鈥?0.1
250
鈥?
Typ
Max
Unit
V
nA
碌A(chǔ)
mA
V
Process NJ450L
Test Conditions
I
G
= 10 碌A(chǔ), V
DS
= 脴V
V
GS
= 鈥?10V, V
DS
= 脴V
V
GS
= 鈥?10V, V
DS
= 脴V
V
DS
= 10V, V
GS
= 脴 V
V
DS
= 10V, I
D
= 0.1 mA
T
A
= 85擄C
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Transconductance
Common Source Output Conductance
Common Source Input Capacitance
g
fs
|Y
os
|
C
iss
25
30
10
1.4
6
150
150
35
20
2
10
mS
碌S
pF
pF
nV/鈭欻z
nV/鈭欻z
碌Vrms
pA/鈭欻z
V
DS
= 10V, I
D
= 10 mA
V
DS
= 10V, I
D
= 10 mA
V
DS
= 10V, I
D
= 10 mA
V
DS
= 10V, V
DS
= 脴V
V
DS
= 5V, I
D
= 10 mA
V
DS
= 5V, I
D
= 10 mA
V
DS
= 5V, I
D
= 10 mA
R
S
< 100 K鈩?/div>
f = 1 kHz
f = 1 kHz
f = 140 kHz
f = 140 kHz
f = 1 kHz
f = 10 Hz
f = 10 kHz
to 20 kHz
f = 1 kHz
Common Source Reverse Transfer Capacitance
C
rss
Equivalent Short Circuit
Input Noise Voltage
e
N
爐
e
N
Total
爐
0.4
0.1
0.6
Equivalent Open Circuit Input Noise Current
爐
N
i
TO脨46 Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate & Case
www.interfet.com
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
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