High Voltage Transistors
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
2N6515, 2N6516, 2N6517
2N6519, 2N6520
Base Current
Collector Current 鈥?Continuous
Total Device Dissipation
@ T
A
= 25擄C
Derate above 25擄C
Total Device Dissipation
@ T
C
= 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
6.0
5.0
I
B
I
C
P
D
250
500
625
5.0
1.5
12
鈥?5 to +150
mAdc
mAdc
mW
mW/擄C
Watts
mW/擄C
擄C
2N6515
250
250
2N6519
300
300
2N6517
2N6520
350
350
Unit
Vdc
Vdc
Vdc
NPN
2N6515
2N6517
PNP
2N6519
2N6520
Voltage and current are negative
for PNP transistors
P
D
T
J
, T
stg
1
2
3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
COLLECTOR
3
2
BASE
NPN
1
EMITTER
1
EMITTER
2
BASE
PNP
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
擄C/W
擄C/W
COLLECTOR
3
CASE 29鈥?4, STYLE 1
TO鈥?2 (TO鈥?26AA)
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(1)
(I
C
= 1.0 mAdc, I
B
= 0)
V
(BR)CEO
2N6515
2N6519
2N6517, 2N6520
V
(BR)CBO
2N6515
2N6519
2N6517, 2N6520
V
(BR)EBO
2N6515, 2N6517
2N6519, 2N6520
6.0
5.0
鈥?/div>
鈥?/div>
250
300
350
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
250
300
350
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
Vdc
Collector鈥揃ase Breakdown Voltage
(I
C
= 100
碌A(chǔ)dc,
I
E
= 0 )
Emitter鈥揃ase Breakdown Voltage
(I
E
= 10
碌A(chǔ)dc,
I
C
= 0)
1. Pulse Test: Pulse Width
鈮?/div>
300
ms,
Duty Cycle
鈮?/div>
2.0%.
漏
Semiconductor Components Industries, LLC, 2001
1
February, 2001 鈥?Rev. 2
Publication Order Number:
2N6515/D
2N6515/D相關(guān)型號(hào)PDF文件下載
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TRANSISTOR | BJT | PNP | 14V V(BR)CEO | 1A I(C) | TO-5
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3
4
5
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