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2N6505 Datasheet

  • 2N6505

  • Silicon Controlled Rectifiers

  • 8頁

  • ONSEMI

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2N6504 Series
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supply crowbar circuits.
鈥?/div>
Glass Passivated Junctions with Center Gate Fire for Greater
Parameter Uniformity and Stability
鈥?/div>
Small, Rugged, Thermowatt Constructed for Low Thermal
Resistance, High Heat Dissipation and Durability
鈥?/div>
Blocking Voltage to 800 Volts
鈥?/div>
300 A Surge Current Capability
鈥?/div>
Device Marking: Logo, Device Type, e.g., 2N6504, Date Code
MAXIMUM RATINGS
(T
J
= 25擄C unless otherwise noted)
Rating
*Peak Repetitive Off鈥揝tate Voltage (Note 1.)
(Gate Open, Sine Wave 50 to 60 Hz,
T
J
= 25 to 125擄C)
2N6504
2N6505
2N6507
2N6508
2N6509
On-State RMS Current
(180擄 Conduction Angles; T
C
= 85擄C)
Average On-State Current
(180擄 Conduction Angles; T
C
= 85擄C)
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, T
J
= 100擄C)
Forward Peak Gate Power
(Pulse Width
鈮?/div>
1.0
碌s,
T
C
= 85擄C)
Forward Average Gate Power
(t = 8.3 ms, T
C
= 85擄C)
Forward Peak Gate Current
(Pulse Width
鈮?/div>
1.0
碌s,
T
C
= 85擄C)
Operating Junction Temperature Range
Storage Temperature Range
*Indicates JEDEC Registered Data
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Symbol
V
DRM,
V
RRM
50
100
400
600
800
I
T(RMS)
I
T(AV)
I
TSM
P
GM
P
G(AV)
I
GM
T
J
T
stg
25
16
250
20
0.5
2.0
鈥?0 to
+125
鈥?0 to
+150
A
A
A
Watts
1
Watts
A
擄C
2
3
4
1
2
3
x
= 4, 5, 7, 8 or 9
YY = Year
WW = Work Week
Value
Unit
Volts
http://onsemi.com
SCRs
25 AMPERES RMS
50 thru 800 VOLTS
G
A
K
MARKING
DIAGRAM
4
TO鈥?20AB
CASE 221A
STYLE 3
YY WW
650x
PIN ASSIGNMENT
Cathode
Anode
Gate
Anode
ORDERING INFORMATION
擄C
Device
2N6504
2N6505
2N6507
2N6508
2N6509
Package
TO220AB
TO220AB
TO220AB
TO220AB
TO220AB
Shipping
500/Box
500/Box
500/Box
500/Box
500/Box
Preferred
devices are recommended choices for future use
and best overall value.
漏
Semiconductor Components Industries, LLC, 2001
1
April, 2001 鈥?Rev. 4
Publication Order Number:
2N6504/D

2N6505 產(chǎn)品屬性

  • ON Semiconductor

  • SCR

  • 250 A

  • 100 V

  • 0.01 mA

  • 1.8 V

  • 1.5 V

  • 30 mA

  • 40 mA

  • Through Hole

  • TO-220-3

  • Bulk

  • + 125 C

  • - 40 C

  • 500

2N6505相關(guān)型號PDF文件下載

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  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | TO-5
  • 英文版
    NPN SILICON PLANAR TRANSISTOR
    ETC
  • 英文版
    NPN SILICON PLANAR TRANSISTOR
    ETC [ETC]
  • 英文版
    TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 1A I(C) | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 1A I(C) | TO-5
  • 英文版
    TRANSISTOR | BJT | PNP | 14V V(BR)CEO | 1A I(C) | TO-5

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