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2N6487/D Datasheet

  • 2N6487/D

  • Complementary Silicon Plastic Power Translators

  • 8頁

  • ETC

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ON Semiconductort
NPN
Complementary Silicon Plastic
Power Transistors
. . . designed for use in general鈥損urpose amplifier and switching
applications.
2N6487
2N6488 *
2N6490
2N6491*
*ON Semiconductor Preferred Device
PNP
鈥?/div>
DC Current Gain Specified to 15 Amperes 鈥?/div>
h
FE
= 20鈥?50 @ I
C
= 5.0 Adc
= 5.0 (Min) @ I
C
= 15 Adc
鈥?/div>
Collector鈥揈mitter Sustaining Voltage 鈥?/div>
V
CEO(sus)
= 60 Vdc (Min) 鈥?2N6487, 2N6490
= 80 Vdc (Min) 鈥?2N6488, 2N6491
鈥?/div>
High Current Gain 鈥?Bandwidth Product
f
T
= 5.0 MHz (Min) @ I
C
= 1.0 Adc
鈥?/div>
TO鈥?20AB Compact Package
15 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60鈥?0 VOLTS
75 WATTS
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MAXIMUM RATINGS (1)
Rating
Symbol
V
CEO
V
CB
V
EB
I
C
I
B
2N6487
2N6490
60
70
2N6488
2N6491
80
90
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Base Current
5.0
15
5.0
Collector Current 鈥?Continuous
Total Power Dissipation @ T
C
= 25_C
Derate above 25_C
Total Power Dissipation @ T
A
= 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
P
D
P
D
75
0.6
Watts
W/_C
Watts
W/_C
_C
1.8
0.014
T
J
, T
stg
鈥?5 to +150
CASE 221A鈥?9
TO鈥?20AB
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
胃JC
R
胃JA
Max
70
Unit
Thermal Resistance, Junction to Case
1.67
_C/W
_C/W
Thermal Resistance, Junction to Ambient
(1) Indicates JEDEC Registered Data.
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
漏
Semiconductor Components Industries, LLC, 2001
1
March, 2001 鈥?Rev. 9
Publication Order Number:
2N6487/D

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