B-24
01/99
2N6449, 2N6450
N-Channel Silicon Junction Field-Effect Transistor
樓 High Voltage
Absolute maximum ratings at T
A
= 25隆C
Reverse Gate Source Voltage
Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
2N6449
2N6450
鈥?300 V
鈥?200 V
鈥?300 V
鈥?200 V
10 mA
10 mA
800 mW
800 mW
6.4 mW/擄C 6.4 mW/擄C
At 25擄C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
V
(BR)GSS
2N6449
Min
鈥?300
鈥?100
Max
2N6450
Min
鈥?200
鈥?100
Max
Unit
V
nA
nA
碌A(chǔ)
鈥?100
碌A(chǔ)
V
mA
鈥?
2
鈥?15
10
Process NJ42
Test Conditions
I
G
= 鈥?10 碌A(chǔ), V
DS
= 脴V
V
GS
= 鈥?150V, V
DS
= 脴V
V
GS
= 鈥?100V, V
DS
= 脴V
V
GS
= 鈥?150V, V
DS
= 脴V
V
GS
= 鈥?100V, V
DS
= 脴V
V
DS
= 30V, I
D
= 4 nA
V
DS
= 30V, V
GS
= 脴V
T
A
= 150擄C
T
A
= 150擄C
Gate Reverse Current
I
GSS
鈥?100
鈥?
2
鈥?15
10
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source Forward
Transfer Admittance
Common Source Output Conductance
Common Source Input Capacitance
Common Source
Reverse Transfer Capacitance
V
GS(OFF)
I
DSS
Y
fs
Y
os
C
iss
C
rss
0.5
3
100
20
2.5
0.5
3
100
20
2.5
mS
碌S
pF
pF
V
DS
= 30V, V
GS
= 脴V
V
DS
= 30V, V
GS
= 脴V
V
DS
= 30V, V
GS
= 脴V
V
DS
= 30V, V
GS
= 脴V
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
TO脨39 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
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