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2N6439 Datasheet

  • 2N6439

  • 60 W, 225 to 400 MHz CONTROLLED “Q” BROADBAND RF POWER TRA...

  • 6頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N6439/D
NPN Silicon
RF Power Transistor
. . . designed primarily for wideband large鈥搒ignal output amplifier stages in the
225 to 400 MHz frequency range.
鈥?/div>
Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc
Output Power = 60 Watts over 225 to 400 MHz Band
Minimum Gain = 7.8 dB @ 400 MHz
鈥?/div>
Built鈥揑n Matching Network for Broadband Operation Using Double
Match Technique
鈥?/div>
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
鈥?/div>
Gold Metallization System for High Reliability Applications
2N6439
60 W, 225 to 400 MHz
CONTROLLED 鈥淨(jìng)鈥?/div>
BROADBAND RF POWER
TRANSISTOR
NPN SILICON
CASE 316鈥?1, STYLE 1
MAXIMUM RATINGS*
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Total Device Dissipation @ TC = 25擄C (1)
Derate above 25擄C
Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
PD
Tstg
Value
33
60
4.0
146
0.83
鈥?65 to + 200
Unit
Vdc
Vdc
Vdc
Watts
W/擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
1.2
Unit
擄C/W
ELECTRICAL CHARACTERISTICS*
(TC = 25擄C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(IC = 50 mAdc, IB = 0)
Collector鈥揈mitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
Emitter鈥揃ase Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
V(BR)CEO
V(BR)CES
V(BR)EBO
ICBO
33
60
4.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
2.0
Vdc
Vdc
Vdc
mAdc
NOTE:
(continued)
1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF
amplifiers.
* Indicates JEDEC Registered Data.
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
2N6439
1

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