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2N6437/D Datasheet

  • 2N6437/D

  • High-Power PNP Silicon Transistors

  • 74.98KB

  • 8頁

  • ETC

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ON Semiconductort
High-Power PNP Silicon
Transistors
. . . designed for use in industrial鈥搈ilitary power amplifier and
switching circuit applications.
2N6437
2N6438 *
*ON Semiconductor Preferred Device
鈥?/div>
High Collector鈥揈mitter Sustaining Voltage 鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
V
CEO(sus)
= 100 Vdc (Min) 鈥?2N6437
= 120 Vdc (Min) 鈥?2N6438
High DC Current Gain 鈥?/div>
h
FE
= 20鈥?0 @I
C
= 10 Adc
= 12 (Min) @ I
C
= 25 Adc
Low Collector鈥揈mitter Saturation Voltage 鈥?/div>
V
CE(sat)
= 1.0 Vdc (Max) @ I
C
= 10 Adc
Fast Switching Times @ I
C
= 10 Adc
t
r
= 0.3
碌s
(Max)
t
s
= 1.0
碌s
(Max)
t
f
= 0.25
碌s
(Max)
Complement to NPN 2N6339 thru 2N6341
25 AMPERE
POWER TRANSISTORS
PNP SILICON
100, 120 VOLTS
200 WATTS
鈥?/div>
CASE 1鈥?7
TO鈥?04AA
(TO鈥?)
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MAXIMUM RATINGS (1)
Rating
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Symbol
V
CB
V
EB
I
C
I
B
V
CEO
2N6437
120
100
2N6438
140
120
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector鈥揈mitter Voltage
6.0
25
50
10
Collector Current 鈥?Continuous
Peak
Base Current
Total Device Dissipation @ T
C
= 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
P
D
200
1.14
Watts
W/_C
_C
T
J
,T
stg
鈥?5 to +200
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
胃JC
Max
Unit
Thermal Resistance, Junction to Case
0.875
_C/W
(1) Indicates JEDEC Registered Data.
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
漏
Semiconductor Components Industries, LLC, 2001
1
April, 2001 鈥?Rev. 2
Publication Order Number:
2N6437/D

2N6437/D相關型號PDF文件下載

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    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-126VAR
    ETC
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    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-126VAR
  • 英文版
    TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 4A I(C) | TO-126VAR
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    Power Transistors
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