Darlington Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ T
A
= 25擄C
Derate above 25擄C
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
, T
stg
Value
40
40
12
500
625
5.0
1.5
12
鈥?5 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/擄C
Watts
mW/擄C
擄C
2N6426*
2N6427
*ON Semiconductor Preferred Device
1
2
3
CASE 29鈥?4, STYLE 1
TO鈥?2 (TO鈥?26AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
擄C/W
擄C/W
COLLECTOR 3
BASE
2
EMITTER 1
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(1)
(I
C
= 10 mAdc, V
BE
= 0)
Collector鈥揃ase Breakdown Voltage
(I
C
= 100
mAdc,
I
E
= 0)
Emitter鈥揃ase Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CE
= 25 Vdc, I
B
= 0)
Collector Cutoff Current
(V
CB
= 30 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
= 10 Vdc, I
C
= 0)
1. Pulse Test: Pulse Width
v
300
ms;
Duty Cycle
v
2.0%.
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CES
I
CBO
I
EBO
40
40
12
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1.0
50
50
Vdc
Vdc
Vdc
mAdc
nAdc
nAdc
漏
Semiconductor Components Industries, LLC, 2001
1
February, 2001 鈥?Rev. 1
Publication Order Number:
2N6426/D
2N6426/D相關(guān)型號PDF文件下載
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