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2N6394 Datasheet

  • 2N6394

  • Silicon Controlled Rectifiers

  • 8頁

  • ONSEMI

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2N6394 Series
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supplies.
鈥?/div>
Glass Passivated Junctions with Center Gate Geometry for Greater
Parameter Uniformity and Stability
鈥?/div>
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
鈥?/div>
Blocking Voltage to 800 Volts
鈥?/div>
Device Marking: Logo, Device Type, e.g., 2N6394, Date Code
*MAXIMUM RATINGS
(T
J
= 25擄C unless otherwise noted)
Rating
Peak Repetitive Off鈥揝tate Voltage (Note 1.)
(T
J
= 鈥?0 to 125擄C, Sine Wave,
50 to 60 Hz, Gate Open)
2N6394
2N6395
2N6397
2N6399
On-State RMS Current
(180擄 Conduction Angles; T
C
= 90擄C)
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz, T
J
= 90擄C)
Circuit Fusing (t = 8.3 ms)
Forward Peak Gate Power
(Pulse Width
鈮?/div>
1.0
碌s,
T
C
= 90擄C)
Forward Average Gate Power
(t = 8.3 ms, T
C
= 90擄C)
Forward Peak Gate Current
(Pulse Width
鈮?/div>
1.0
碌s,
T
C
= 90擄C)
Operating Junction Temperature Range
Storage Temperature Range
*Indicates JEDEC Registered Data
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Symbol
V
DRM,
V
RRM
50
100
400
800
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
T
J
T
stg
12
100
40
20
0.5
2.0
鈥?0 to
+125
鈥?0 to
+150
A
A
A
2
s
Watts
Watts
A
擄C
擄C
1
2
3
4
1
2
3
x
= 4, 5, 7 or 9
YY = Year
WW = Work Week
Value
Unit
Volts
http://onsemi.com
SCRs
12 AMPERES RMS
50 thru 800 VOLTS
G
A
K
MARKING
DIAGRAM
4
TO鈥?20AB
CASE 221A
STYLE 3
YY WW
639x
PIN ASSIGNMENT
Cathode
Anode
Gate
Anode
ORDERING INFORMATION
Device
2N6394
2N6395
2N6397
2N6399
Package
TO220AB
TO220AB
TO220AB
TO220AB
Shipping
500/Box
500/Box
500/Box
500/Box
Preferred
devices are recommended choices for future use
and best overall value.
漏
Semiconductor Components Industries, LLC, 2001
1
April, 2001 鈥?Rev. 3
Publication Order Number:
2N6394/D

2N6394 產品屬性

  • 500

  • 分離式半導體產品

  • SCR - 單個

  • -

  • 標準恢復型

  • 50V

  • 1.5V

  • 2.2V

  • -

  • 12A

  • 30mA

  • 50mA

  • 10µA

  • 100A @ 60Hz

  • -40°C ~ 125°C

  • 通孔

  • TO-220-3

  • TO-220AB

  • 散裝

2N6394相關型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | BJT | PNP | 75V V(BR)CEO | 10A I(C) | TO-3
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 75V V(BR)CEO | 10A I(C) | TO-3
  • 英文版
    TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 300MA I(C) | TO-9
  • 英文版
    TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 300MA I(C) | TO-9
  • 英文版
    TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 300MA I(C) | TO-9
  • 英文版
    TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-3
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-3
  • 英文版
    TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-3
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-3
  • 英文版
    Power Transistors
    CENTRAL
  • 英文版
    PNP DARLINGTON POWER SILICON TRANSISTOR
    MICROSEMI
  • 英文版
    DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
    BOCA
  • 英文版
    POWER TRANSISTORS(8A, 75W)
    MOSPEC
  • 英文版
    Silicon NPN Power Transistors
    ISC [Incha...
  • 英文版
    DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
    BOCA [Boca...
  • 英文版
    POWER TRANSISTORS(8A, 75W)
    MOSPEC [Mo...
  • 英文版
    Power Transistors
    CENTRAL [C...
  • 英文版
    PNP DARLINGTON POWER SILICON TRANSISTOR
    MICROSEMI ...
  • 英文版
    Power Transistors
    CENTRAL
  • 英文版
    PNP DARLINGTON POWER SILICON TRANSISTOR
    MICROSEMI

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