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2N6387G Datasheet

  • 2N6387G

  • Plastic Medium−Power Silicon Transistors DARLINGTON NP...

  • 6頁

  • ONSEMI

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2N6387, 2N6388
2N6388 is a Preferred Device
Plastic Medium鈭扨ower
Silicon Transistors
These devices are designed for general鈭抪urpose amplifier and
low鈭抯peed switching applications.
Features
http://onsemi.com
鈥?/div>
High DC Current Gain 鈭?h
FE
= 2500 (Typ) @ I
C
= 4.0 Adc
鈥?/div>
Collector鈭扙mitter Sustaining Voltage 鈭?@ 100 mAdc
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
V
CEO(sus)
= 60 Vdc (Min) 鈭?2N6387
= 80 Vdc (Min) 鈭?2N6388
Low Collector鈭扙mitter Saturation Voltage 鈭?/div>
V
CE(sat)
= 2.0 Vdc (Max) @ I
C
= 5.0 Adc 鈭?2N6387, 2N6388
Monolithic Construction with Built鈭捍n Base鈭扙mitter Shunt Resistors
TO鈭?20AB Compact Package
Pb鈭扚ree Packages are Available*
DARLINGTON NPN SILICON
POWER TRANSISTORS
8 AND 10 AMPERES
65 WATTS, 60 鈭?80 VOLTS
MARKING
DIAGRAM
MAXIMUM RATINGS
(Note 1)
Rating
Collector鈭扙mitter Voltage
Collector鈭払ase Voltage
Emitter鈭払ase Voltage
Collector Current 鈭?Continuous
鈭?Peak
Base Current
Total Power Dissipation @ T
C
= 25_C
Derate above 25_C
Total Power Dissipation @ T
A
= 25_C
Derate above 25_C
Operating and Storage Junction,
Temperature Range
2N6387
2N6388
2N6387
2N6388
Symbol
V
CEO
V
CB
V
EB
I
C
I
B
P
D
P
D
T
J
, T
stg
Value
60
80
60
80
5.0
10
15
250
65
0.52
2.0
0.016
鈭?5 to +150
Unit
Vdc
Vdc
Vdc
Adc
mAdc
W
W/擄C
W
W/擄C
擄C
2N6387
Symbol
R
qJC
R
qJA
Max
1.92
62.5
Unit
_C/W
_C/W
2N6387G
2N6388
2N6388G
4
TO鈭?20AB
CASE 221A
STYLE 1
1
2N638xG
AYWW
2
3
2N638x = Device Code
x = 7 or 8
G
= Pb鈭扚ree Package
A
= Assembly Location
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
Package
TO鈭?20AB
TO鈭?20AB
(Pb鈭扚ree)
TO鈭?20AB
TO鈭?20AB
(Pb鈭扚ree)
Shipping
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction鈭抰o鈭扖ase
Thermal Resistance, Junction鈭抰o鈭扐mbient
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
Preferred
devices are recommended choices for future use
and best overall value.
*For additional information on our Pb鈭扚ree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
漏
Semiconductor Components Industries, LLC, 2006
1
August, 2006 鈭?Rev. 12
Publication Order Number:
2N6387/D

2N6387G 產(chǎn)品屬性

  • 50

  • 分離式半導體產(chǎn)品

  • 晶體管(BJT) - 單路

  • -

  • NPN - 達林頓

  • 10A

  • 60V

  • 3V @ 100mA，10A

  • 1mA

  • 1000 @ 5A，3V

  • 2W

  • -

  • 通孔

  • TO-220-3

  • TO-220AB

  • 管件

  • 2N6387G-ND2N6387GOS

2N6387G相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | BJT | PNP | 75V V(BR)CEO | 10A I(C) | TO-3
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 75V V(BR)CEO | 10A I(C) | TO-3
  • 英文版
    TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 300MA I(C) | TO-9
  • 英文版
    TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 300MA I(C) | TO-9
  • 英文版
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  • 英文版
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    ETC
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  • 英文版
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