Low Collector鈥揈mitter Saturation Voltage 鈥?/div>
V
CE(sat)
= 2.0 Vdc (Max) @ I
C
= 5.0 Adc 鈥?2N6387, 2N6388
Monolithic Construction with Built鈥揑n Base鈥揈mitter Shunt Resistors
TO鈥?20AB Compact Package
DARLINGTON
8 AND 10 AMPERE
NPN SILICON
POWER TRANSISTORS
60鈥?0 VOLTS
65 WATTS
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Rating
Symbol
V
CEO
V
CB
V
EB
I
C
I
B
2N6387
60
60
10
15
2N6388
80
80
10
15
Unit
Vdc
Vdc
Vdc
Adc
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
5.0
Collector Current 鈥?Continuous
Peak
Base Current
Total Power Dissipation
@ T
C
= 25_C
Derate above 25_C
Total Power Dissipation
@ T
A
= 25_C
Derate above 25_C
250
mAdc
Watts
W/_C
Watts
W/_C
_C
P
D
65
0.52
P
D
2.0
0.016
Operating and Storage Junction,
Temperature Range
T
J
, T
stg
鈥?5 to +150
*MAXIMUM RATINGS
CASE 221A鈥?9
TO鈥?20AB
THERMAL CHARACTERISTICS
Characteristics
Symbol
R
胃JC
R
胃JA
Max
Unit
Thermal Resistance, Junction to Case
1.92
62.5
_C/W
_C/W
Thermal Resistance, Junction to Ambient
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
漏
Semiconductor Components Industries, LLC, 2001
1
March, 2001 鈥?Rev. 9
Publication Order Number:
2N6387/D
1
2
3
4
5
6
7
8
