TECHNICAL DATA
NPN DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/523
Devices
2N6383
2N6384
2N6385
Qualified Level
JAN, JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
Symbol 2N6383 2N6384 2N6385 Unit
V
CEO
V
CBO
V
EBO
I
B
I
C
P
T
T
op
,
T
stg
40
40
60
60
5.0
0.25
10
6.0
100
-55 to +175
Max.
1.75
80
80
Vdc
Vdc
Vdc
Adc
Adc
W
W
0
C
Unit
C/W
@ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
Operating & Storage Temperature
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance Junction-to-Case
R
胃
JC
0
0
1) Derate linearly 34.2 mW/ C above T
A
> +25 C
2)
Derate linearly 571 mW/
0
C above T
C
> +25
0
C
TO-3* (TO-204AA)
0
*See Appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
C
= +25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc
2N6383
2N6384
2N6385
2N6383
2N6384
2N6385
2N6383
2N6384
2N6385
40
60
80
40
60
80
1.0
1.0
1.0
Vdc
V
(BR)
CEO
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc, R
BB
= 100
鈩?/div>
V
(BR)
CER
Vdc
Collector-Base Cutoff Current
V
CE
= 40 Vdc
V
CE
= 60 Vdc
V
CE
= 80 Vdc
I
CBO
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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