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2N6348A Datasheet

  • 2N6348A

  • Silicon Bidirectional Thyristors

  • 8頁

  • ONSEMI

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2N6344A, 2N6348A,
2N6349A
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full-wave silicon gate controlled solid-state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied anode voltage with positive or
negative gate triggering.
鈥?/div>
Blocking Voltage to 800 Volts
鈥?/div>
All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
鈥?/div>
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
鈥?/div>
Gate Triggering Guaranteed in all Four Quadrants
鈥?/div>
For 400 Hz Operation, Consult Factory
鈥?/div>
8 Ampere Devices Available as 2N6344 thru 2N6349
鈥?/div>
Device Marking: Logo, Device Type, e.g., 2N6344A, Date Code
MAXIMUM RATINGS
(TJ = 25擄C unless otherwise noted)
Rating
*Peak Repetitive Off鈥揝tate Voltage(1)
(Gate Open, TJ = 鈥?0 to +110擄C,
Sine Wave 50 to 60 Hz, Gate Open)
2N6344A, 2N6348A
2N6349A
*On鈥揝tate RMS Current
(Full Cycle Sine Wave 50 to 60 Hz)
(TC = +80擄C)
(TC = +95擄C)
*Peak Non鈥搑epetitive Surge Current
(One Full Cycle, 60 Hz, TC = +80擄C)
Preceded and followed by rated current
Circuit Fusing Consideration (t = 8.3 ms)
*Peak Gate Power (TC = +80擄C,
Pulse Width = 2.0
碌s)
*Average Gate Power
(TC = +80擄C, t = 8.3 ms)
*Peak Gate Current
(Pulse Width = 2.0
碌s;
TC = +80擄C)
*Peak Gate Voltage
(Pulse Width = 2.0
碌s;
TC = +80擄C)
*Operating Junction Temperature Range
*Storage Temperature Range
Symbol
VDRM,
VRRM
600
800
IT(RMS)
12
6.0
ITSM
100
A
1
I2t
PGM
PG(AV)
IGM
VGM
TJ
Tstg
59
20
0.5
2.0
A2s
Watts
Watt
A
Volts
擄C
擄C
2
3
4
A
Value
Unit
Volts
1
http://onsemi.com
TRIACS
12 AMPERES RMS
600 thru 800 VOLTS
MT2
G
MT1
4
2
3
TO鈥?20AB
CASE 221A
STYLE 4
PIN ASSIGNMENT
Main Terminal 1
Main Terminal 2
Gate
Main Terminal 2
ORDERING INFORMATION
Device
2N6344A
2N6348A
2N6349A
Package
TO220AB
TO220AB
TO220AB
Shipping
500/Box
500/Box
500/Box
"
10
鈥?40 to
+125
鈥?40 to
+150
*Indicates JEDEC Registered Data.
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Preferred
devices are recommended choices for future use
and best overall value.
漏
Semiconductor Components Industries, LLC, 1999
1
February, 2000 鈥?Rev. 1
Publication Order Number:
2N6344A/D

2N6348A 產(chǎn)品屬性

  • ON Semiconductor

  • 雙向可控硅

  • 600 V

  • 100 A

  • 10 uA

  • 2.5 V

  • 75 mA

  • 40 mA

  • 1.75 V

  • Through Hole

  • TO-220-3

  • Box

  • 10 V

  • + 125 C

  • - 40 C

  • 600 V

  • 500

2N6348A相關(guān)型號PDF文件下載

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